GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs
Identifieur interne : 004104 ( Main/Repository ); précédent : 004103; suivant : 004105GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs
Auteurs : RBID : Pascal:10-0452773Descripteurs français
- Pascal (Inist)
- Technologie matériau, Couche sacrificielle, Arséniure de gallium, Phosphure de gallium, Phosphure d'indium, Conception ingénierie, Poutre cantilever, Méthode MOCVD, Attaque chimique, Fin gravure, Lithographie, Analyse régression, Modèle autorégressif, Etude expérimentale, Photofabrication, Semiconducteur III-V, Hétérostructure.
English descriptors
- KwdEn :
- Autoregressive model, Cantilever beam, Chemical etching, Engineering design, Etch stop, Experimental study, Gallium arsenides, Gallium phosphide, Heterostructures, III-V semiconductors, Indium phosphide, Lithography, MOCVD, Material engineering, Photofabrication, Regression analysis, Sacrificial layer.
Abstract
We report on the design, fabrication and initial mechanical testing of cantilevers with tips based on a GaAs/In0.485Ga0.515P/AlAs heterostructure grown by metal organic chemical vapor deposition. They were produced using a dedicated technological process based on (1) the formation of integrated tips through an AlAs-assisted surface sacrificial wet-etching process and (2) the GaAs cantilever release fully protected between two InGaP etch-stop layers. 2 μm thick InGaP/GaAs/InGaP cantilevers had integrated pyramidal tips with the sides at ∼45° to (100). Metallic elements were processed close to the tip apexes using non-standard optical lithography. The cantilever release was accomplished using photolithography, Ar ion milling of InGaP and wet chemical etching of GaAs via resist layers deposited by a draping technique. A tip-cantilever prototype with length, width and thickness of 150, 35 and 2 μm, respectively, exhibited a resonance frequency of 66.2 kHz, which correlated well with a theoretical value of 57 kHz for a GaAs cantilever of identical dimensions.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs</title><author><name sortKey="Gregusova, Dagmar" uniqKey="Gregusova D">Dagmar Gregusova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>84104 Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>84104 Bratislava</wicri:noRegion></affiliation></author><author><name sortKey="Kudela, R Bert" uniqKey="Kudela R">R Bert Kudela</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>84104 Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>84104 Bratislava</wicri:noRegion></affiliation></author><author><name sortKey="Elias, Peter" uniqKey="Elias P">Peter Elias</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>84104 Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>84104 Bratislava</wicri:noRegion></affiliation></author><author><name sortKey="Soltys, J N" uniqKey="Soltys J">J N Soltys</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>84104 Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>84104 Bratislava</wicri:noRegion></affiliation></author><author><name sortKey="Kostic, Ivan" uniqKey="Kostic I">Ivan Kostic</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Informatics, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>84507, Bratislava</s2><s3>SVK</s3><sZ>5 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>84507, Bratislava</wicri:noRegion></affiliation></author><author><name sortKey="Cambel, Vladimir" uniqKey="Cambel V">Vladimir Cambel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>84104 Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>84104 Bratislava</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0452773</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0452773 INIST</idno><idno type="RBID">Pascal:10-0452773</idno><idno type="wicri:Area/Main/Corpus">003C84</idno><idno type="wicri:Area/Main/Repository">004104</idno></publicationStmt><seriesStmt><idno type="ISSN">0960-1317</idno><title level="j" type="abbreviated">J. micromech. microeng. : (Print)</title><title level="j" type="main">Journal of micromechanics and microengineering : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Autoregressive model</term><term>Cantilever beam</term><term>Chemical etching</term><term>Engineering design</term><term>Etch stop</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium phosphide</term><term>Heterostructures</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>Lithography</term><term>MOCVD</term><term>Material engineering</term><term>Photofabrication</term><term>Regression analysis</term><term>Sacrificial layer</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Technologie matériau</term><term>Couche sacrificielle</term><term>Arséniure de gallium</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Conception ingénierie</term><term>Poutre cantilever</term><term>Méthode MOCVD</term><term>Attaque chimique</term><term>Fin gravure</term><term>Lithographie</term><term>Analyse régression</term><term>Modèle autorégressif</term><term>Etude expérimentale</term><term>Photofabrication</term><term>Semiconducteur III-V</term><term>Hétérostructure</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the design, fabrication and initial mechanical testing of cantilevers with tips based on a GaAs/In<sub>0.485</sub>Ga<sub>0.515</sub>P/AlAs heterostructure grown by metal organic chemical vapor deposition. They were produced using a dedicated technological process based on (1) the formation of integrated tips through an AlAs-assisted surface sacrificial wet-etching process and (2) the GaAs cantilever release fully protected between two InGaP etch-stop layers. 2 μm thick InGaP/GaAs/InGaP cantilevers had integrated pyramidal tips with the sides at ∼45° to (100). Metallic elements were processed close to the tip apexes using non-standard optical lithography. The cantilever release was accomplished using photolithography, Ar ion milling of InGaP and wet chemical etching of GaAs via resist layers deposited by a draping technique. A tip-cantilever prototype with length, width and thickness of 150, 35 and 2 μm, respectively, exhibited a resonance frequency of 66.2 kHz, which correlated well with a theoretical value of 57 kHz for a GaAs cantilever of identical dimensions.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0960-1317</s0></fA01><fA03 i2="1"><s0>J. micromech. microeng. : (Print)</s0></fA03><fA05><s2>20</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs</s1></fA08><fA11 i1="01" i2="1"><s1>GREGUSOVA (Dagmar)</s1></fA11><fA11 i1="02" i2="1"><s1>KUDELA (Róbert)</s1></fA11><fA11 i1="03" i2="1"><s1>ELIAS (Peter)</s1></fA11><fA11 i1="04" i2="1"><s1>SOLTYS (Ján)</s1></fA11><fA11 i1="05" i2="1"><s1>KOSTIC (Ivan)</s1></fA11><fA11 i1="06" i2="1"><s1>CAMBEL (Vladimir)</s1></fA11><fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>84104 Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Informatics, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>84507, Bratislava</s2><s3>SVK</s3><sZ>5 aut.</sZ></fA14><fA20><s2>097001.1-097001.6</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22483</s2><s5>354000193196650350</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0452773</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of micromechanics and microengineering : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the design, fabrication and initial mechanical testing of cantilevers with tips based on a GaAs/In<sub>0.485</sub>Ga<sub>0.515</sub>P/AlAs heterostructure grown by metal organic chemical vapor deposition. They were produced using a dedicated technological process based on (1) the formation of integrated tips through an AlAs-assisted surface sacrificial wet-etching process and (2) the GaAs cantilever release fully protected between two InGaP etch-stop layers. 2 μm thick InGaP/GaAs/InGaP cantilevers had integrated pyramidal tips with the sides at ∼45° to (100). Metallic elements were processed close to the tip apexes using non-standard optical lithography. The cantilever release was accomplished using photolithography, Ar ion milling of InGaP and wet chemical etching of GaAs via resist layers deposited by a draping technique. A tip-cantilever prototype with length, width and thickness of 150, 35 and 2 μm, respectively, exhibited a resonance frequency of 66.2 kHz, which correlated well with a theoretical value of 57 kHz for a GaAs cantilever of identical dimensions.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F17</s0></fC02><fC02 i1="02" i2="X"><s0>001D12I</s0></fC02><fC02 i1="03" i2="3"><s0>001B00G10C</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Technologie matériau</s0><s5>06</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Material engineering</s0><s5>06</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Tecnología material</s0><s5>06</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Couche sacrificielle</s0><s5>07</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Sacrificial layer</s0><s5>07</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Capa sacrificial</s0><s5>07</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Phosphure de gallium</s0><s5>19</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Gallium phosphide</s0><s5>19</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Galio fosfuro</s0><s5>19</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>20</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>20</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>20</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Conception ingénierie</s0><s5>21</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Engineering design</s0><s5>21</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Concepción ingeniería</s0><s5>21</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Poutre cantilever</s0><s5>22</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Cantilever beam</s0><s5>22</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Viga cantilever</s0><s5>22</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>23</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>MOCVD</s0><s5>23</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Attaque chimique</s0><s5>24</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Chemical etching</s0><s5>24</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Ataque químico</s0><s5>24</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Fin gravure</s0><s5>25</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Etch stop</s0><s5>25</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Para grabado</s0><s5>25</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Lithographie</s0><s5>26</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Lithography</s0><s5>26</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Litografía</s0><s5>26</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Analyse régression</s0><s5>27</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Regression analysis</s0><s5>27</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Análisis regresión</s0><s5>27</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Modèle autorégressif</s0><s5>28</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Autoregressive model</s0><s5>28</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Modelo autorregresivo</s0><s5>28</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Etude expérimentale</s0><s5>33</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Experimental study</s0><s5>33</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Estudio experimental</s0><s5>33</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Photofabrication</s0><s5>41</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Photofabrication</s0><s5>41</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Fotofabricación</s0><s5>41</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Semiconducteur III-V</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>III-V semiconductors</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Semiconductor III-V</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Hétérostructure</s0><s4>CD</s4><s5>97</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Heterostructures</s0><s4>CD</s4><s5>97</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Heteroestructura</s0><s4>CD</s4><s5>97</s5></fC03><fN21><s1>291</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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